Core Specification Parameters

• Model : M393A2K43EB3-CWE
• Brand : Samsung
• Memory Type : DDR5
• Capacity : 32GB
• (single) Qty : 32
• Memory Architecture : 1Rx8 (8 chips on one side)
• Transmission Rate : 4800MHz (PC5-38400)
• Memory Bandwidth: 38.4GB/s
• Operating Voltage: 1.1V (Typical)
• Number of Pins: 288 pins
• ECC Support: Supports Advanced ECC (Error-Correcting Code)
• ECC Support: Supports Advanced ECC (Error-Correcting Code)
• Temperature Range:
• Operating Temperature: 0°C to 95°C
• Memory Temperature: -40°C to 95°C
• Timing Parameters: CL38-38-38 (CAS Delay 38 cycles)
• Technical Features: Supports On-Die ECC (On-chip Error Correction), PMIC (Power Management Integrated Circuit), and On-chip ODT (On-Die Termination Resistor)
• Certified Standards: JEDEC DDR5-4800 compliant

Product Features and Benefits

Breakthrough Performance:

• Up to 4800MHz operating frequency, approximately 50% higher than DDR4. Up to 4800MHz operating frequency, ~50% higher bandwidth than DDR4
• Designed for AI, big data analytics, virtualization, and high-performance computing
• Low-latency design ensures immediate response for critical applications

Optimized for energy-efficiency:

• 1.1V low-voltage design reduces power consumption by ~20% compared to DDR4
• Built-in PMIC enables precise voltage regulation and reduces energy wastage
• Supports Dynamic Voltage and Frequency Regulation (DVFS)

Enterprise-grade reliability:

• Advanced ECC technology detects and corrects single-bit errors
• On-Die ECC provides additional chip-level error protection
• Built-in temperature sensor monitors memory status in real-time
• Supports end-to-end data integrity protection

Scalability:

• Supports higher memory densities up to 64GB on a single stick
• Supports server-grade memory scaling to meet the needs of multi-node configurations
• Compatible with the latest Intel and AMD server platforms Compatible with the latest Intel and AMD server platforms

Thermal Design:

• Optimized heat sink design ensures efficient heat dissipation
• High-temperature resistant design adapts to the harsh environment of data centers
• Bufferless design reduces signal interference

Application Scenarios

• Enterprise-class servers: database, virtualization, and cloud computing platforms
• High-performance computing (HPC): scientific computing, AI training, and inference
• Data centers: large-scale data processing, analytics, and storage
• Enterprise storage: NAS, SAN, and distributed storage Edge computing equipment: NAS, SAN, and distributed storage Enterprise storage systems: NAS, SAN, distributed storage
• Edge computing devices: industrial control, networking devices
• Financial trading systems: high-frequency trading, risk analysis

Technical innovations

• Dual 32-bit channel design: DDR5 adopts a dual 32-bit channel architecture to provide higher parallel processing power
• Built-in power management: Integrated PMIC enables finer voltage control and reduces motherboard complexity
• Enhanced signal integrity: Improved signaling design supports higher frequency and longer distance. Enhanced Signal Integrity: Improved signaling design to support higher frequencies and longer distances
• Future Compatibility: Seamless upgrade path for next-generation server platforms

The Samsung M393A2K43EB3-CWE DDR5 memory module is the ideal choice for modern enterprise-class infrastructures due to its superior performance, power efficiency and reliability, meeting the growing demands of computing and solidly supporting future technological developments.

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