Specifications

• Capacity: 16GB
• Memory Type: DDR4
• ECC: ECC
• DIMM Type: RDIMM
• Rank: 2Rx8
• Speed: 3200
• Voltage: 1.2V
• Height: STD
• Qty: 1
• Module Name: PC4-25600R
• Made By: SK Hynix
• Density: 8G
• Depth: 2G
• Pins: 288 pin
• Width Height: x72/LP
• Width: x72
• Die Generation: 4th
• Package Type: Flipchip
• Die Package: SDP
• Package Material: Lead Free & Halogen Free
• Organization: x8
• Temperature: Commercial Temp(0°C ~ 85°C)
• CL: 22
• TRCD: 22
• TRP: 22

Performance parameters

Memory capacity: The memory capacity of this product is 16GB, which provides sufficient storage space for the server to run various complex applications and process large amounts of data. Whether running large databases, virtualized environments, or performing data analysis, cloud computing and other workloads, 16GB of memory can ensure smooth system operation and reduce performance bottlenecks caused by insufficient memory.

Memory speed: Its memory speed is as high as 3200MHz, which means that 3200 trillion data transfer operations can be performed per second. High-frequency memory can quickly respond to CPU instructions, greatly shorten the reading and writing time of data, and significantly improve the overall performance of the system. In server applications where data processing speed is critical, the 3200MHz memory speed can ensure efficient data transmission and speed up the execution of tasks. For example, in scenarios such as real-time transaction processing and big data analysis, it can quickly process massive data and provide timely and accurate decision support for enterprises.

Memory standard: Follow the DDR4-3200/PC4-25600R standard. Among them, “PC4-25600R” means that the data transmission bandwidth of the memory module is 25600MB/s. This standard ensures the compatibility and efficient collaborative working ability between memory and hardware devices such as motherboards, ensures smooth data transmission between memory and other hardware components, and gives full play to the high performance advantages of memory.

Memory voltage: The operating voltage is 1.20V. Compared with some high-voltage memory modules, the 1.20V low-voltage design effectively reduces energy consumption and server power consumption while ensuring high-performance operation of the memory. It not only conforms to the concept of green energy saving, but also reduces the long-term operating costs of enterprises.

Memory rank: Dual-rank configuration is adopted. Dual-rank memory increases the addressing space of the memory by arranging memory chips on both sides of the memory module, thereby improving data transmission efficiency. Compared with single-rank memory, dual-rank memory can provide more data to the CPU at the same time, further improving the overall performance of the system, especially when processing multiple tasks and large amounts of data, the advantages of dual-rank configuration are more obvious.

Error checking: Supports ECC (Error Correcting Code) error correction code technology. ECC technology can detect and correct single-bit errors in memory in real time, and can also detect double-bit errors, thereby effectively preventing data errors during transmission and storage, greatly improving the stability and reliability of system operation. In server applications, data accuracy is crucial. ECC technology can ensure the integrity and correctness of data during long-term operation of the server, avoiding data loss or system failure caused by memory errors. ECC function is essential for industry applications such as finance, medical care, and scientific research that require extremely high data accuracy.

Signal processing: It has registered signal processing function. As mentioned above, the memory signal is buffered and re-driven through registers, which enhances the strength and stability of the signal, enables the memory to work stably in a complex server system environment, reduces compatibility issues between the memory and hardware such as the motherboard, and improves the reliability and stability of the entire server system.

CAS delay: CAS (Column Address Strobe) delay is CL22. CAS delay refers to the time required for the memory to actually start transmitting data after receiving the instruction to read data. CL22 means the delay time is 22 clock cycles. Although the CAS latency value is not as small as possible, and factors such as the memory frequency need to be considered comprehensively, in the HMA82GR7CJR8N-XN memory, the CL22 latency matches the high frequency of 3200MHz, which can maintain the stable operation of the memory system while ensuring high data transmission rate, and provide efficient memory data access services for the server system.